PART |
Description |
Maker |
CXG1091TN |
SP4T GSM Dualband Antenna Switch 5V Logic
|
SONY
|
TST0911 |
Dualband SiGe-Power Amplifier for GSM 900/1800/1900 From old datasheet system
|
Atmel
|
MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司 MOTOROLA[Motorola, Inc]
|
ADP3408 ADP3408ARU-18 ADP3408ARU-25 ADP3408ARU-1.8 |
0.3-10.0V; GSM power management system. For GSM/DCS/PCS/CDMA handsets Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85
|
AD[Analog Devices] Analog Devices, Inc.
|
MF1043S-1 |
FOR GSM MOBILE TELEPHONE / Rx FOR GSM MOBILE TELEPHONE, Rx From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
KDV350E |
VCO for UHF Band Radio VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
VCO190-2250T VCO190-2250TY |
VCO, 2200 MHz - 2300 MHz VCO Product Specification
|
SIRENZA MICRODEVICES INC
|
VCO190-125TY 90-125T |
VCO, 120 MHz - 130 MHz VCO Product Specification
|
SIRENZA MICRODEVICES
|
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|